mmbt3904-hf (npn) qw -jtr02 page 1 rev :a maximum ratings (at t a=25c unless otherwise noted) t yp symbol parameter min max unit features -epitaxial planar die construction -as complementary type, the pnp transistor mmbt3904-hf is recommended d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) s o t - 2 3 1 base 2 emitter collector 3 collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector dissipation thermal resistance, junction to ambient storage temperature and junction temperature v cbo v ceo v ebo i c p c r ja t stg , t j -55 60 40 6 0.2 0.2 625 +150 v v v a w o c/w o c comchip t echnology co., l td. symbol parameter conditions min max unit electrical characteristics (at t a=25c unless otherwise noted) collector-base breakdown voltage 0.1 i c =100 a , i e =0 collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-of f current collector cut-of f current emitter cut-of f current dc current gain base-emitter saturation voltage collector-emitter saturation voltage t ransition frequency delay time storage time rise time fall time i c =1ma , i b =0 i e =100 a , i c =0 v cb =60v , i e =0 v ce =30v , v be(of f) =3v v eb =5v , i c =0 v ce =1v , i c =10ma v ce =1v , i c =50ma i c =50ma , i b =5ma i c =50ma , i b =5ma v ce =20v , i c =10ma f=100mh z v cc =3.0v , v be =-0.5v i c =10ma , i b1 =1.0ma v cc =3.0v , i c =10ma i b1 =i b2 =1.0ma v (br)cbo v (br)ceo v (br)ebo i cbo i cex i ebo h fe(1) h fe(2) v ce (sat) v be (sat) f t td tr ts tf 40 60 6 50 0.1 400 100 60 0.3 0.95 300 35 35 200 50 v v v a na a v v mhz ns ns ns ns 3 1 2 0.1 18(3.00) 0.1 10(2.80) 0.055(1.40) 0.047(1.20) 0.079(2.00) 0.071(1.80) 0.041(1.05) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.006(0.15) 0.002(0.05) 0.100(2.55) 0.089(2.25) 0.004(0.10) max 0.005(0.20) min general purpose t ransistor rohs device halogen free
ra ting and characteristic cur ves (mmbt3904-hf) page 2 rev :a fig.1 t ypical pulsed current gain v .s. collector current 4 0 0 3 0 0 2 0 0 1 0 0 0 h f e - t y p i c a l p u l s e d c u r r e n t g a i n ic- collector current (ma) 0 . 1 1 1 0 1 0 0 vce=5v o 125c o 125c o 125c o 125c o 125c o 125c o 125c o 25c o 125c o 125c o 125c o -40c 5 0 0 fig.2 collector-emitter saturation voltage v .s. collector current 0 . 1 0 0 . 0 5 v c e ( s a t ) - c o l l e c t o r - e m i t t e r v o l t a g e ( v ) ic- collector current (ma) 0 . 1 1 1 0 1 0 0 0 . 1 5 ? = 1 0 o - 4 0 c o 1 2 5 c o 2 5 c 100 fig.3 base-emitter saturatioin voltage v .s. collector current ic - collector current (ma) 0.1 1 10 0.4 0.6 0.8 1 e b ) b s - e i o t a v v ( s a t - a e m t t e r v l g e ( ) o 125c ?=10 o -40c o 25c 100 fig.4 base-emitter on voltage v .s. collector current ic - collector current (ma) 0.1 1 10 0.4 0.6 0.8 1 b e o n a t e ( ) v ( ) - b s e - e m i t e r v o l t a g v 0.2 v ce =5v o 125c o 125c o 125c o 125c o 125c o 125c o 125c o 25c o 125c o 125c o 125c o -40c i c b o - c o l l e c t o r c u r r e n t ( n a ) 25 50 75 10 500 100 1 0.1 100 f i g . 5 c o l l e c t o r - c u t o ff c u r r e n t v . s . a m b i e n t t e m p e r a t u r e o t a - ambient temperature (c) 125 150 v cb =30v fig.6 capacitance v .s. reverse bias voltage 1 2 3 4 5 1 0 c a p a c i t a n c e ( p f ) 0 . 1 1 1 0 1 0 0 reverse bias voltage (v) c obo f=1.0mhz c ibo comchip t echnology co., l td. qw -jtr02 general purpose t ransistor
page 3 rev :a comchip t echnology co., l td. b c d d d 2 d 1 e f p p 0 p 1 s o t - 2 3 s y m b o l a w w 1 ( m m ) ( i n c h ) 0 . 1 2 2 0 . 0 0 4 0 . 1 1 2 0 . 0 0 4 0 . 0 5 5 0 . 0 0 4 0 . 0 6 1 0 . 0 0 4 7 . 0 0 8 0 . 0 4 1 . 9 6 9 m i n . 0 . 5 1 2 0 . 0 0 8 s o t - 2 3 s y m b o l ( m m ) ( i n c h ) 0 . 0 6 9 0 . 0 0 4 0 . 1 3 8 0 . 0 0 2 0 . 1 5 7 0 . 0 0 4 0 . 1 5 7 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 0 . 3 1 5 0 . 0 0 8 0 . 5 6 7 m a x . 3 . 1 0 0 . 1 0 2 . 8 5 0 . 1 0 4 . 0 0 0 . 1 0 1 . 5 5 0 . 1 0 3 . 5 0 0 . 0 5 1 . 7 5 0 . 1 0 5 0 . 0 m i n . 1 3 . 0 0 . 2 0 1 . 4 0 0 . 1 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 0 5 8 . 0 0 0 . 3 0 1 4 . 4 m a x . 1 7 8 1 qw -jtr02 general purpose t ransistor o 1 2 0 t railer device leader 10 pitches (min) 10 pitches (min) ....... ....... ....... ....... ....... ....... ....... ....... end start d 1 d 2 d w 1 t c direction of feed reel t aping specification i n d e x h o l e d e f b w p p 0 p 1 a
page 4 rev :a comchip t echnology co., l td. suggested p ad layout size (inch) 0.031 (mm) 0.80 0.95 0.95 0.037 0.037 sot -23 park number mmbt3904-hf marking code 1am marking code 2.02 0.080 e 3.03 0.120 standard packaging case t ype qty per reel (pcs) 3000 sot -23 reel size (inch) 7 a d c b a b c d 1am 3 1 2 e qw -jtr02 general purpose t ransistor
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